I-Sputtering Coating Lapho izinhlayiya ezinamandla amakhulu ziqhuma endaweni eqinile, izinhlayiya endaweni eqinile zingathola amandla futhi zibaleke endaweni ukuze zifakwe ku-substrate.Isenzo se-sputtering saqala ukusetshenziswa kubuchwepheshe bokugqoka ngo-1870, futhi kancane kancane sasetshenziswa ekukhiqizeni izimboni ngemva kuka-1930 ngenxa yokwanda kwezinga lokubeka.Izinto ezisetshenziswa kakhulu zokuphalaza ezinezigxobo ezimbili zikhonjiswe kuMfanekiso 3 [Umdwebo weSchematic wokuphalaza kwezigxobo ezimbili ze-vacuum coating].Ngokuvamile impahla ezofakwa yenziwa ipuleti-ithagethi, egxilwe ku-cathode.I-substrate ibekwe ku-anode ebheke endaweni eqondiwe, amasentimitha ambalwa ukusuka lapho kuhloswe khona.Ngemuva kokuthi uhlelo luphonswe ku-vacuum ephezulu, lugcwaliswa nge-10 ~ 1 Pa gas (imvamisa i-argon), futhi i-voltage yezinkulungwane ezimbalwa zama-volts isetshenziswa phakathi kwe-cathode ne-anode, futhi ukukhishwa okukhanyayo kukhiqizwa phakathi kwama-electrode amabili. .Ama-ion alungile akhiqizwa ukukhishwa andizela ku-cathode ngaphansi kwesenzo senkambu kagesi futhi angqubuzane nama-athomu endaweni okuhlosiwe.Ama-athomu okuhlosiwe aphuma endaweni okuqondiwe kuyo ngenxa yokungqubuzana abizwa ngokuthi ama-athomu a-sputtering, futhi amandla awo aphakathi kuka-1 kuya kumashumi ama-electron volts.Ama-athomu ahlakazekile afakwa phezu kwe-substrate ukuze enze ifilimu.Ngokungafani nokwembozwa kokuhwamuka, ukunamathela kwe-sputter akunqunyelwe indawo encibilikayo yento yefilimu, futhi kungafafaza izinto eziphikisayo ezifana ne-W, Ta, C, Mo, WC, TiC, njll. Ifilimu eyinhlanganisela efafazayo ingafafazwa ukuphalaza okusebenzayo. indlela, okungukuthi, igesi esebenzayo (O, N, HS, CH, njll.)
yengezwe ku-Ar gas, futhi igesi esebenzayo nama-ion ayo ahlangana ne-athomu eqondiwe noma i-athomu efafaziwe ukuze kwakhe inhlanganisela (efana ne-oxide, i-nitrogen) Compounds, njll.) futhi ifakwe ku-substrate.Indlela ye-high-frequency sputtering ingasetshenziswa ukufaka ifilimu ye-insulating.I-substrate ifakwe ku-electrode ephansi, futhi inhloso yokuvikela ifakwe ku-electrode ehlukile.Umkhawulo owodwa wokunikezwa kwamandla we-high-frequency usekelwe, futhi umkhawulo owodwa uxhunywe ku-electrode efakwe i-insulating target ngokusebenzisa inethiwekhi ehambisanayo kanye ne-DC blocking capacitor.Ngemva kokuvula ugesi we-high-frequency, i-voltage ye-high-frequency ishintsha ngokuqhubekayo i-polarity yayo.Ama-electron nama-ion aqondile ku-plasma ashaya okuhlosiwe kokuvikela ngesikhathi somjikelezo wesigamu esihle kanye nomjikelezo ongemuhle wengxenye ye-voltage, ngokulandelana.Njengoba ukuhamba kwe-electron kuphakeme kunama-ion amahle, ingaphezulu lethagethi ye-insulating likhokhiswa kabi.Uma ukulingana okuguquguqukayo kufinyelelwa, okuhlosiwe kunethuba elibi lokuchema, ukuze ama-ion ahle afafaze kuthagethi aqhubeke.Ukusetshenziswa kwe-magnetron sputtering kungakhuphula izinga lokubeka cishe ngokuhleleka kobukhulu uma kuqhathaniswa ne-non-magnetron sputtering.
Isikhathi sokuthumela: Jul-31-2021