I-evaporation coating: Ngokushisisa nokuhwashisa into ethile ukuze uyifake endaweni eqinile, ibizwa ngokuthi i-evaporation coating.Le ndlela yaqala ehlongozwa nguM. Faraday ngo-1857, futhi isibe yinye ye
amasu enamathela esetshenziswa ezikhathini zanamuhla.Isakhiwo sezinto zokumboza zokuhwamuka kuboniswe kuMfanekiso 1.
Izinto ezihwamukile njengezinsimbi, izinhlanganisela, njll. zifakwa ku-crucible noma zilengiswe ocingweni olushisayo njengomthombo wokuhwamuka, futhi ucezu lomsebenzi oluzogqitshwa, njengensimbi, i-ceramic, ipulasitiki namanye ama-substrates, abekwe phambi crucible.Ngemuva kokuthi isistimu ikhishelwe ku-vacuum ephezulu, i-crucible iyashiswa ukuze ihwamuke okuqukethwe.Ama-athomu noma ama-molecule ento ehwamukile afakwa phezu kwe-substrate ngendlela efingqiwe.Ugqinsi lwefilimu lungasukela kumakhulu ama-angstrom kuya kuma-microns ambalwa.Ugqinsi lwefilimu lunqunywa izinga lokuhwamuka nesikhathi somthombo wokuhwamuka (noma inani elilayishwayo), futhi lihlobene nebanga phakathi komthombo ne-substrate.Ezimbotsheni zezindawo ezinkulu, i-substrate ejikelezayo noma imithombo eminingi yokuhwamuka ngokuvamile isetshenziswa ukuze kuqinisekiswe ukufana kokuqina kwefilimu.Ibanga elisuka emthonjeni womhwamuko liye endaweni engaphansi kufanele libe ngaphansi komkhawulo womzila wama-molecule womhwamuko kugesi eyinsalela ukuze kuvinjelwe ukungqubuzana kwamangqamuzana omhwamuko nama-molecule egesi ayinsalela ukuthi angabangeli imiphumela yamakhemikhali.Amandla e-kinetic ajwayelekile ama-molecule e-vapor angaba ngu-0.1 kuya ku-0.2 ama-electron volts.
Kunezinhlobo ezintathu zemithombo yokuhwamuka.
①Umthombo wokushisisa omelana: Sebenzisa izinsimbi ezingabambeki njenge-tungsten ne-tantalum ukwenza ucwecwe lwesikebhe noma umcu, futhi usebenzise i-electric current ukushisa into ehwamukayo ngaphezu kwayo noma ku-crucible (Umfanekiso 1 [Umdwebo ohleliwe wemishini yokufaka umhwamuko] i-vacuum coating) Ukumelana nokushisisa umthombo usetshenziswa kakhulu ukuhwamuka kwezinto ezifana ne-Cd, Pb, Ag, Al, Cu, Cr, Au, Ni;
②Umthombo wokushisa wokungenisa imvamisa ephezulu: sebenzisa i-high-frequency induction current ukushisisa izinto eziyisikhilimu kanye nokuhwamuka;
③Umthombo wokushisisa we-electronic beam: uyasebenza Kuzinto ezisetshenziswayo ezinezinga lokushisa eliphakeme lokuhwamuka (elingekho ngaphansi kuka-2000 [618-1]), okokusebenza kuhwamuka ngokuqhumisa okokusebenza ngemishayo yama-electron.
Uma kuqhathaniswa nezinye izindlela zokumboza i-vacuum, ukuhwamuka kwe-vacuum kunezinga eliphezulu lokubeka, futhi kungambozwa ngamafilimu ayinhlanganisela ayisisekelo nangaboli ngokushisa.
Ukuze ufake ifilimu yekristalu eyodwa ehlanzekile, i-epitaxy ye-molecular beam ingasetshenziswa.Idivayisi ye-molecular beam epitaxy yokukhula kwe-doped GaAlAs isendlalelo sekristalu eyodwa iboniswa kuMfanekiso 2 [Umdwebo weskimu we-vacuum ye-vacuum yedivayisi ye-molecular beam epitaxy].I-jet furnace ifakwe umthombo wamangqamuzana.Uma ishiselwa ezingeni elithile lokushisa ngaphansi kwe-vacuum ephezulu kakhulu, izakhi ezikuhhavini zikhishelwa ku-substrate ngomfudlana wemolekyuli ofana nensimu.I-substrate ishiselwa ezingeni elithile lokushisa, ama-molecule afakwe ku-substrate angafuduka, futhi amakristalu akhuliswa ngokulandelana kwe-substrate crystal lattice.I-epitaxy ye-molecular beam ingasetshenziselwa
thola ifilimu ye-crystal eyodwa ene-high-purity enesilinganiso esidingekayo se-stoichiometric.Ifilimu ikhula kancane kakhulu Isivinini singalawulwa ku-1 single layer/sec.Ngokulawula i-baffle, ifilimu ye-crystal eyodwa enesakhiwo esidingekayo kanye nesakhiwo singenziwa ngokunembile.I-epitaxy ye-molecular beam isetshenziswa kabanzi ukwenza amadivaysi ahlukahlukene ahlanganisiwe okubona kanye namafilimu ahlukahlukene esakhiwo se-superlattice.
Isikhathi sokuthumela: Jul-31-2021